High electron mobility transistor and method of forming the same

ABSTRACT

A High Electron Mobility Transistor (HEMT) includes a first III-V compound layer having a first band gap, and a second III-V compound layer having a second band gap over the first III-V compound layer. The second band gap is greater than the first band gap. A crystalline interfacial layer is overlying and in contact with the second III-V compound layer. A gate dielectric is over the crystalline interfacial layer. A gate electrode is over the gate dielectric. A source region and a drain region are over the second III-V compound layer, and are on opposite sides of the gate electrode.

PRIORITY CLAIM AND CROSS-REFERENCE

This application is a continuation of U.S. patent application Ser. No.13/769,785, entitled “High Electron Mobility Transistor and Method ofForming the Same,” filed on Feb. 18, 2013, now U.S. Pat. No. 8,803,158,which application is incorporated herein by reference.

BACKGROUND

In semiconductor technology, due to the high mobility values, GroupIII-Group V (or III-V) semiconductor compounds are used to form variousintegrated circuit devices, such as high power field-effect transistors,high frequency transistors, and High Electron Mobility Transistors(HEMTs). A HEMT is a field effect transistor incorporating a2-Dimensional Electron Gas (2DEG) layer close to the junction betweentwo materials with different band gaps (i.e., a heterojunction). The2DEG layer, instead of a doped region as is generally the case for MetalOxide Semiconductor Field Effect Transistors (MOSFETs), acts as thechannel. In contrast with the MOSFETs, the HEMTs have a number ofattractive properties including high electron mobility, the ability totransmit signals at high frequencies, etc.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the embodiments, and the advantagesthereof, reference is now made to the following descriptions taken inconjunction with the accompanying drawings, in which:

FIGS. 1 through 9 are cross-sectional views of intermediate stages inthe manufacturing of a High Electron Mobility Transistor (HEMT) inaccordance with some exemplary embodiments;

FIG. 10 illustrates a schematic process flow for forming the HEMT inaccordance with exemplary embodiments; and

FIGS. 11 through 17 are cross-sectional views of intermediate stages inthe manufacturing of HEMTs in accordance with alternative embodiments.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

The making and using of the embodiments of the disclosure are discussedin detail below. It should be appreciated, however, that the embodimentsprovide many applicable concepts that can be embodied in a wide varietyof specific contexts. The specific embodiments discussed areillustrative, and do not limit the scope of the disclosure.

A High Electron Mobility Transistor (HEMT) and the method of forming thesame are provided in accordance with various exemplary embodiments. Theintermediate stages of forming the HEMT are illustrated. The variationsof the embodiments are discussed. Throughout the various views andillustrative embodiments, like reference numbers are used to designatelike elements. The process for forming the HEMT may be found referringto the exemplary process flow 100 shown in FIG. 10. Additional processsteps may be provided before, during, or after process 100 in FIG. 10.Various figures have been simplified for a better understanding of theconcepts of the present disclosure.

FIGS. 1 through 9 illustrate the cross-sectional views of intermediatestages in the formation of an HEMT in accordance with exemplaryembodiments. The HEMT is formed using a gate first approach, in which agate electrode is formed before the formation of source and drainregions. Referring to FIG. 1, which is a cross-sectional view of aportion of substrate 20, substrate 20 may be a part of wafer 10. In someembodiments, substrate 20 includes a silicon carbide (SiC) substrate, asapphire substrate, a silicon substrate, or the like. Substrate 20 maybe a bulk substrate formed of a bulk material, or may be a compositesubstrate including a plurality of layers that are formed of differentmaterials.

In accordance with some embodiments, buffer layer 22 is first formedover substrate 20, which acts as the buffer and/or the transition layerfor the subsequently formed overlying layers. The respective step isshown as step 101 in FIG. 10. Buffer layer 22 may be epitaxially grownusing Metal Organic Vapor Phase Epitaxy (MOVPE). Buffer layer 22 mayfunction as an interface to reduce lattice mismatch between substrate 20and the subsequently formed III-V compound layers 26 (FIG. 3) and 28(FIG. 4). In some embodiments, buffer layer 22 includes an aluminumnitride (AlN) layer having a thickness in a range between about 10nanometers (nm) and about 300 nm. Buffer layer 22 may include a singlelayer or a plurality of layers. For example, buffer layer 22 may includelow-temperature AlN layer 22A formed at a temperature between about 800°C. and about 1,200° C., and high-temperature AlN layer 22B formed at atemperature between about 1,000° C. and about 1,400° C. In someembodiments, buffer layer 22A has a thickness in a range between about10 nanometers (nm) and about 100 nm, and buffer layer 22B has athickness in a range between about 100 nanometers (nm) and about 200 nm.

Referring to FIG. 2, III-V compound layer 24 is formed over buffer layer22. The respective step is also shown as step 101 in FIG. 10. III-Vcompound layer 24 may also act as a buffer layer, and hence is referredto as buffer layer 24 hereinafter. Buffer layer 24 can be epitaxiallygrown using MOVPE, for example. Buffer layer 24 may include an aluminumgallium nitride (AlGaN) layer, which may have a thickness in a rangefrom about 500 nm to about 1,000 nm. Buffer layer 24 may be a gradedbuffer layer, which means that the relative amounts of the respectivealuminum and/or gallium content change with depth in the layerthroughout a part or the total thickness of buffer layer 24. Therelative amounts may change gradually to reduce the lattice parameterwith the distance from substrate 20. For example, FIG. 2 schematicallyillustrated three sub layers 24A, 24B, and 24C, with the percentages ofaluminum and/or gallium in sub layers 24A, 24B, and 24C different fromeach other. In some exemplary embodiments, sub layer 24A has an aluminumpercentage between about 65 percent and about 85 percent, sub layer 24Bhas an aluminum percentage between about 35 percent and about 60percent, and sub layer 24C has an aluminum percentage between about 10percent and about 30 percent.

Referring to FIG. 3, first III-V compound layer 26 is grown over bufferlayer 24 (step 102 in FIG. 10). In some embodiments, III-V compoundlayer 26 is a gallium nitride (GaN) layer. GaN layer 26 may beepitaxially grown by using, for example, MOVPE, during which agallium-containing precursor and a nitrogen-containing precursor areused. The gallium-containing precursor may include trimethylgallium(TMG), triethylgallium (TEG), or other suitable gallium-containingchemicals. The nitrogen-containing precursor may include ammonia (NH₃),tertiarybutylamine (TBAm), phenyl hydrazine, or other suitablechemicals. In some exemplary embodiments, III-V compound layer 26 has athickness ranging from about 0.5 micron to about 10 microns. III-Vcompound layer 26 may be undoped. Alternatively, III-V compound layer 26is unintentionally doped, such as lightly doped with n-type dopants dueto a precursor used for forming III-V compound layer 26, with no dopantthat may cause III-V compound layer 26 to be n-type or p-typeintentionally added.

Referring to FIG. 4, a second III-V compound layer 28 is grown on, andmay contact, III-V compound layer 26. The respective step is shown asstep 104 in FIG. 10. III-V compound layer 28 has a band gap greater thanthe band gap of III-V compound layer 26. An interface 31 is formedbetween III-V compound layer 26 and III-V compound layer 28. When therespective HEMT is operated, carrier channel 30, which is known as aTwo-Dimensional Electron Gas (2DEG), is formed and located in III-Vcompound layer 26 near interface 31. In some embodiments, III-V compoundlayer 28 is an AlGaN layer.

III-V compound layer 28 may be epitaxially grown over III-V compoundlayer 26 through MOVPE, for example. When formed of AlGaN, III-Vcompound layer 28 may be grown using an aluminum-containing precursor, agallium-containing precursor, and a nitrogen-containing precursor. Thealuminum-containing precursor may include trimethylaluminum (TMA),triethylaluminium (TEA), or other suitable chemicals. Thegallium-containing precursor and the nitrogen-containing precursor maybe selected from the same candidate precursors used for forming GaNlayer 26. In some exemplary embodiments, AlGaN layer 28 has a thicknessranging from about 3 nm to about 50 nm.

FIG. 5 illustrates the formation of crystalline interfacial layer 32.The respective step is shown as step 106 in FIG. 10. Crystallineinterfacial layer 32 may have a single crystalline structure, or mayhave a polycrystalline structure. In some embodiments, crystallineinterfacial layer 32 comprises a dielectric material, or comprises asemiconductor material with a relatively high resistivity and arelatively high band gap. In some exemplary embodiments, the band gap ofcrystalline interfacial layer 32 is higher than the band gap of III-Vcompound layer 26 (such as GaN). Furthermore, in some embodiments, theband gap of crystalline interfacial layer 32 is higher than the bandgaps of III-V compound layers 28 (such as AlGaN) and 26, although othermaterials with lower band gaps may also be used. In the embodiments thatcrystalline interfacial layer 32 comprises a semiconductor material, therespective semiconductor material may be selected from AlN,In_(x)Al_(y)Ga_(z)N (with x+y+z=1, and 0≦x, y, and z≦1), or the like. Inthe embodiments that crystalline interfacial layer 32 comprises adielectric material, the respective dielectric material may be selectedfrom SiN_(x), SiO_(x), Al₂O₃, MgO, Ga₂O₃, La₂O₃, HfO₂, ZrO₂, Y₂O₃,Gd₂O₃, Ce₂O₃, Ta₂O₃, Ta₂O₅, combinations thereof, and multi-layersthereof.

Crystalline interfacial layer 32 may be formed using MOCVD, Atomic LayerDeposition (ALD), Physical Vapor Deposition (PVD), or the like. Theprocess condition for forming crystalline interfacial layer 32 iscontrolled, so that crystalline interfacial layer 32 has a goodcrystalline structure, for example, with a single-crystalline structureor at least poly-crystalline structure. With crystalline interfaciallayer 32 having a good crystalline structure, the bonding between theatoms of crystalline interfacial layer 32 is strong. As a result, theInterfacial Density of States (Dit) at the interface between crystallineinterfacial layer 32 and III-V compound layer 28 is low. The resultingHEMT 42 (FIG. 9) thus has a small threshold voltage (Vt) shift, and thereliability of HEMT 42 is improved. The appropriate process conditionsfor forming the crystalline structure may include, for example,increasing the deposition temperature to 500° C. or higher.

In some exemplary embodiments, crystalline interfacial layer 32 may beformed in-situ with the formation of III-V compound layer 28 in a sameprocess chamber, with no vacuum break occurring between the formation ofIII-V compound layer 28 and the formation of crystalline interfaciallayer 32. In alternative embodiments, crystalline interfacial layer 32is formed ex-situ with the formation of III-V compound layer 28, forexample, in different process chambers.

Crystalline interfacial layer 32 may be formed as a crystalline layer asdeposited, or may be formed as a poly-crystalline layer ornear-amorphous layer, and is subsequently re-crystallized through ahigh-temperature annealing. The high-temperature annealing may beperformed with an annealing temperature greater than there-crystallization temperature of the deposited layer(re-crystallization temperature depends on the deposited layer species,and may be higher than 550° C., for example, for HfO₂). Crystallineinterfacial layer 32 may have a thickness between about 2 Å and about100 Å, although different thicknesses may be used.

Next, as shown in FIG. 6, dielectric passivation layer 34 is deposited(step 108 in FIG. 10) over, and may contact, a top surface ofcrystalline interfacial layer 32. In some exemplary embodiments,dielectric passivation layer 34 has a thickness in a range from about100 Å to about 5,000 Å. An exemplary dielectric passivation layer 34includes silicon oxide and/or silicon nitride. When comprising siliconnitride, dielectric passivation layer 34 may be formed by performing aLow-Pressure Chemical Vapor Deposition (LPCVD) method (without plasma)using SiH₄ and NH₃ gases. Dielectric passivation layer 34 protects theunderlying crystalline interfacial layer 32 and III-V compound layer 28from the damage caused by plasma, which plasma is generated in thefollowing processes.

Next, referring to FIG. 7, opening 35 is formed in dielectricpassivation layer 34, for example, through etching. A portion of the topsurface of crystalline interfacial layer 32 is thus exposed. In someexamples, dielectric passivation layer 34 comprises silicon nitride, andopening 35 is formed in a dry etching environment including BCl₃, forexample, as the etchant gas.

Further referring to 7, in some embodiments, gate dielectric layer 36 isdeposited over dielectric passivation layer 34 (step 110 in FIG. 10).Gate dielectric layer 36 also extends into opening 35, and henceincludes a portion overlapping and contacting crystalline interfaciallayer 32. Furthermore, gate dielectric layer 36 includes portions on thesidewalls of dielectric passivation layer 34, and portions overlappingdielectric passivation layer 34. Gate dielectric layer 36 may reduce aleakage current from the respective gate electrode 38 (FIG. 9) to III-Vcompound layer 28. As a result, the resulting HEMT 42 (FIG. 9) could beoperated under high operation voltages for various applications.

In some embodiments, gate dielectric layer 36 has a thickness range fromabout 3 nm to about 50 nm. The exemplary materials of gate dielectriclayer 36 may be selected from silicon oxide, silicon nitride, galliumoxide, aluminum oxide, scandium oxide, zirconium oxide, lanthanum oxide,hafnium oxide, and combinations thereof. Gate dielectric layer 36 mayhave an amorphous structure in order to reduce the leakage currentflowing through gate dielectric layer 36, wherein the amorphousstructure is formed through adjusting process conditions. In someembodiments, gate dielectric layer 36 is formed using Atomic LayerDeposition (ALD). In other embodiments, gate dielectric layer 36 isformed using Plasma Enhanced Chemical Vapor Deposition (PECVD) or LPCVD.The gate dielectric layer 36 is formed in an amorphous ornon-crystallization structure which may be formed in a lower temperaturethan crystalline interfacial layer 32.

FIG. 8 illustrates a cross-sectional view the wafer 10 after theformation of gate electrode 38 over gate dielectric layer 36 (step 112in FIG. 10). Gate electrode 38 comprises a portion extending intoopening 35 (FIG. 7), and may further include portions overlappingdielectric passivation layer 34 and gate dielectric 36. Gate dielectriclayer 36 thus separates gate electrode 38 from dielectric passivationlayer 34 and crystalline interfacial layer 32. In some embodiments, theformation of gate electrode 38 includes depositing a blanket gateelectrode layer over gate dielectric layer 36 and filling opening 35shown in FIG. 7, and performing lithography and etching processes on thegate electrode layer to define gate electrode 38. In some embodiments,gate electrode 38 includes a conductive material layer that includes arefractory metal or the respective compounds including, e.g., titanium(Ti), titanium nitride (TiN), titanium tungsten (TiW), Tantalum (Ta),Tantalum nitride (TaN), and tungsten (W). In other examples, gateelectrode 38 includes nickel (Ni), gold (Au), copper (Cu), or the alloysthereof.

FIG. 9 illustrates a cross-sectional view of wafer 10 after metalfeatures 40 are formed (step 114 in FIG. 10). Two openings (occupied bymetal features 40) are formed on the opposite sides of gate electrode38, for example, by lithography and etching processes performed on gatedielectric layer 36, dielectric passivation layer 34, and crystallineinterfacial layer 32. The portions of III-V compound layer 28 onopposite sides of gate electrode 38 are thus exposed. In some exemplaryformation process of metal features 40, a metal layer (not shown) isdeposited over gate dielectric layer 36 (and dielectric passivationlayer 34), which metal layer fills the openings in dielectric layer 36,dielectric passivation layer 34, and crystalline interfacial layer 32.The metal layer further contacts III-V compound layer 28 and possibly anunderlying layer(s). A photoresist layer (not shown) is formed over themetal layer and then patterned. The patterned photoresist layer is thenused as an etching mask to pattern the metal layer down to theunderlying gate dielectric layer 36 or dielectric passivation layer 34.The remaining portions of the metal layer are metal features 40. Thephotoresist layer is removed after the formation of the metal features40. Metal features 40 are configured as at least parts of the source anddrain regions of the resulting HEMT 42. In the above describedembodiments, gate dielectric 36, gate electrode 38, metal features 40,and carrier channel 30 form HEMT 42. When a voltage is applied to gateelectrode 38, a device current may be modulated.

In some embodiments, metal features 40 include one or more conductivematerials. For example, metal features 40 may comprise Ti, Co, Ni, W,Pt, Ta, Pd, Mo, TiN, an AlCu alloy, and alloys thereof. In otherexamples, each of metal features 40 includes a bottom Ti/TiN layer, anAlCu layer overlying the bottom Ti/TiN layer, and a top Ti layeroverlying the AlCu layer. The formation methods of the metal layerinclude ALD or PVD processes. In some embodiments, a thermal annealingprocess is applied to metal features 40 such that metal features 40react with III-V compound layer 28 and III-V compound layer 26 to forminter-metallic compound 41. Inter-metallic compound 41 (which also formsparts of the source and drain regions of HEMT 42) thus connects to theopposite ends of channel 30, and provides for more effective electricalconnection to carrier channel 30.

A band gap discontinuity exists between III-V compound layer 28 andIII-V compound layer 26, creating the very thin layer 30 of highlymobile conducting electrons in III-V compound layer 26. This thin layer30 is referred to as a Two-Dimensional Electron Gas (2DEG), which isschematically illustrated. 2DEG 30 forms the carrier channel, which isthe channel of HEMT 42. The carrier channel of 2DEG is located in III-Vcompound layer 26 and near interface 31 between III-V compound layer 28and III-V compound layer 26. The carrier channel has high electronmobility partly because III-V compound layer 26 is undoped orunintentionally doped, and the electrons can move freely withoutcollision or with substantially reduced collisions with impurities.

FIGS. 11 through 17 illustrate cross-sectional views of intermediatestages in the formation of HEMTs in accordance with alternativeembodiments. Unless specified otherwise, the materials and formationmethods of the components in these embodiments are essentially the sameas the like components, which are denoted by like reference numerals inthe embodiments shown in FIGS. 1 through 9. The details regarding theformation process and the materials of the components shown in FIGS. 11through 17 may thus be found in the discussion of the embodiment shownin FIGS. 1 through 9.

FIGS. 11 through 13 illustrate cross-sectional views of intermediatestages in the formation of an HEMT using another gate first approach.The initial steps of these embodiments are essentially the same as shownin FIGS. 1 through 5, and hence the details of the formation processesare not repeated herein. Next, as shown in FIG. 11, gate dielectriclayer 36 and gate electrode layer 38 are formed. Gate dielectric layer36 is over, and may be in contact with, crystalline interfacial layer32.

FIG. 12 illustrates the patterning of gate electrode layer 38, gatedielectric layer 36, and crystalline interfacial layer 32, whoseremaining portions are also referred to as gate electrode 38, gatedielectric 36, and crystalline interfacial layer 32, respectively. Gateelectrode 38, gate dielectric 36, and crystalline interfacial layer 32are co-terminus, which means that the respective edges of gate electrode38, gate dielectric 36, and crystalline interfacial layer 32 are alignedwith each other.

FIG. 13 illustrates the formation of dielectric passivation layer 34 andmetal features 40. Dielectric passivation layer 34 comprises a topportion overlapping gate electrode 38, sidewall portions on the edges ofgate electrode 38, gate dielectric 36, and crystalline interfacial layer32, and horizontal portions on the top surface of III-V compound layer28. Metal features 40 penetrate through dielectric passivation layer 34to electrically connect to III-V compound layer 28 and 2DEG 30, forexample, through inter-metallic compound 41.

FIGS. 14 through 17 illustrate cross-sectional views of intermediatestages in the formation of an HEMT using a gate last approach. Theinitial steps of these embodiments are essentially the same as shown inFIGS. 1 through 5, and hence the details of the formation processes arenot repeated herein. Next, as shown in FIG. 14, dielectric passivationlayer 34 is formed over, and may be in contact with, crystallineinterfacial layer 32. In FIG. 15, metal features 40 are formed. Metalfeatures 40 penetrate through dielectric passivation layer 34 andcrystalline interfacial layer 32 to electrically connect to III-Vcompound layer 28 and 2DEG 30, for example, through inter-metalliccompound 41. Although FIG. 15 illustrates inter-metallic compound 41,inter-metallic compound 41 may not be formed at this stage, and may beformed as a result of the subsequent thermal processes.

Next, referring to FIG. 16, dielectric capping layer 37 is formed. Insome embodiments, dielectric capping layer 37 comprises an oxide, anitride, or multi-layers thereof. Dielectric capping layer 37 comprisesportions overlapping metal features 40, and portions over dielectricpassivation layer 34. Next, a patterning step is performed on dielectriccapping layer 37 and dielectric passivation layer 34 and opening 35 isformed as a result of the patterning. The top surface of crystallineinterfacial layer 32 is exposed through opening 35.

Next, as shown in FIG. 17, gate dielectric layer 36 and gate electrodelayer 38 are formed. Gate dielectric layer 36 extends into opening 35(FIG. 16). Furthermore, gate dielectric layer 36 comprises a firstportion in opening 35 and in contact with crystalline interfacial layer32, second portions on the edges of dielectric capping layer 37 anddielectric passivation layer 34, and third portions overlappingdielectric capping layer 37, dielectric passivation layer 34, and metalfeatures 40. Gate electrode 38 also extends into opening 35 (FIG. 16).In subsequent steps (not shown), Inter-Layer Dielectric (not shown) maybe formed to cover the structure in FIG. 17, and contact plugs (notshown) may be formed to electrically couple to gate electrode 38 andmeta features 40. The formation of HEMT 42 is thus finished.

HEMTs 42 formed in accordance with the embodiments of the presentdisclosure include crystalline interfacial layer 32 (FIGS. 9, 13, and17), and gate dielectric 36 over and contacting crystalline interfaciallayer 32. In conventional HEMT formation processes, although gatedielectrics may be used to separate gate electrodes and the underlyingsemiconductor materials to reduce leakage currents, the Dit at theinterfaces between the gate dielectrics and the respective underlyingsemiconductors is very high. The high Dit results in a very highthreshold voltage (Vt) shift, which may be as high as 4 volts or higher.Therefore, the formation of gate dielectrics was not advantageous. Byinserting the crystalline interfacial layer 32 (FIGS. 9, 13, and 17),which has a good crystalline structure and good bonding between atoms,the semiconductor material (such as layer 28 in FIGS. 9, 13, and 17) isin contact with the crystalline interfacial layer 32 that has the goodcrystalline structure, and hence the Dit at the interface between layer28 and layer 32 is low. As a comparison, if crystalline interfaciallayer 32 is not formed, gate dielectric 36 would have been in contactwith the underlying layer 28, and the respective interface has a muchhigher Dit, and in turn causes a much higher Vt shift.

In accordance with some embodiments, an HEMT includes a first III-Vcompound layer having a first band gap, and a second III-V compoundlayer having a second band gap over the first III-V compound layer. Thesecond band gap is greater than the first band gap. A crystallineinterfacial layer is overlying and in contact with the second III-Vcompound layer. A gate dielectric is over the crystalline interfaciallayer. A gate electrode is over the gate dielectric. A source region anda drain region are over the second III-V compound layer, and are onopposite sides of the gate electrode.

In accordance with other embodiments, an HEMT includes a first III-Vcompound layer, a second III-V compound layer over the first III-Vcompound layer, and a crystalline interfacial layer over and in contactwith the second III-V compound layer. A dielectric passivation layer isover the crystalline interfacial layer. A gate dielectric includes aportion penetrating through the dielectric passivation layer to contacta top surface of a portion of the crystalline interfacial layer. A gateelectrode is over the gate dielectric. A source region and a drainregion are over the second III-V compound layer and on opposite sides ofthe gate electrode.

In accordance with yet other embodiments, a method of forming an HEMTincludes epitaxially growing a first III-V compound layer, epitaxiallygrowing a second III-V compound layer over the first III-V compoundlayer, and growing a crystalline interfacial layer over and in contactwith the second III-V compound layer. The method further includesforming a gate electrode over the III-V compound layer, and forming asource region and a drain region over the second III-V compound layerand on opposite sides of the gate electrode.

Although the embodiments and their advantages have been described indetail, it should be understood that various changes, substitutions andalterations can be made herein without departing from the spirit andscope of the embodiments as defined by the appended claims. Moreover,the scope of the present application is not intended to be limited tothe particular embodiments of the process, machine, manufacture, andcomposition of matter, means, methods and steps described in thespecification. As one of ordinary skill in the art will readilyappreciate from the disclosure, processes, machines, manufacture,compositions of matter, means, methods, or steps, presently existing orlater to be developed, that perform substantially the same function orachieve substantially the same result as the corresponding embodimentsdescribed herein may be utilized according to the disclosure.Accordingly, the appended claims are intended to include within theirscope such processes, machines, manufacture, compositions of matter,means, methods, or steps. In addition, each claim constitutes a separateembodiment, and the combination of various claims and embodiments arewithin the scope of the disclosure.

What is claimed is:
 1. A High Electron Mobility Transistor (HEMT)comprising: a first III-V compound layer having a first band gap; acrystalline starting layer having a crystalline structure over and incontact with the first III-V compound layer; a gate dielectric over thecrystalline starting layer; a gate electrode over the gate dielectric;and a source region and a drain region in contact with the first III-Vcompound layer and on opposite sides of the gate electrode.
 2. The HEMTof claim 1 further comprising a second III-V compound layer having asecond band gap underlying and in contact with the first III-V compoundlayer, wherein the second band gap is smaller than the first band gap.3. The HEMT of claim 2 further comprising a Two-Dimensional Electron Gas(2DEG) in the second III-V compound layer.
 4. The HEMT of claim 1,wherein the crystalline starting layer is a dielectric layer.
 5. TheHEMT of claim 4, wherein the gate dielectric is an amorphous dielectriclayer.
 6. The HEMT of claim 1, wherein the crystalline starting layer isa semiconductor layer with a third band gap higher than the first bandgap.
 7. The HEMT of claim 1, wherein the gate electrode, the gatedielectric, and the crystalline starting layer are co-terminus, withedges of the crystalline starting layer aligned to respective edges ofthe gate electrode and the gate dielectric.
 8. The HEMT of claim 1,wherein the crystalline starting layer comprises: a first portionoverlapped by the gate dielectric and the gate electrode; and secondportions misaligned with the gate dielectric and the gate electrode. 9.The HEMT of claim 1 further comprising a dielectric passivation layerover the first III-V compound layer, wherein the source region and thedrain region penetrate through the dielectric passivation layer.
 10. AHigh Electron Mobility Transistor (HEMT) comprising: a first III-Vcompound layer; a crystalline starting layer having a crystallinestructure over and in contact with the first III-V compound layer; adielectric passivation layer over the crystalline starting layer; a gatedielectric comprising a portion penetrating through the dielectricpassivation layer to contact a top surface of a portion of thecrystalline starting layer; a gate electrode over the gate dielectric;and a source region and a drain region in contact with the first III-Vcompound layer and on opposite sides of the gate electrode.
 11. The HEMTof claim 10 further comprising a second III-V compound layer underlyingthe first III-V compound layer, with a Two-Dimensional Electron Gas(2DEG) formed in the second III-V compound layer.
 12. The HEMT of claim10, wherein the crystalline starting layer is a dielectric layer, andthe gate dielectric has an amorphous structure.
 13. The HEMT of claim10, wherein the crystalline starting layer has a single-crystallinestructure.
 14. The HEMT of claim 10, wherein the crystalline startinglayer has a poly-crystalline structure.
 15. A method of forming a HighElectron Mobility Transistor (HEMT), the method comprising: epitaxiallygrowing a first III-V compound layer; growing a crystalline startinglayer having a crystalline structure over and in contact with the firstIII-V compound layer, wherein the crystalline starting layer is adielectric layer; forming a gate dielectric over the crystallinestarting layer; forming a gate electrode over the gate dielectric; andforming a source region and a drain region on opposite sides of the gateelectrode, wherein the source region and the drain region areelectrically coupled to the first III-V compound layer.
 16. The methodof claim 15 further comprising, before the epitaxially growing the firstIII-V compound layer, epitaxially growing a second III-V compound layer,with the first III-V compound layer being over and contacting the secondIII-V compound layer.
 17. The method of claim 15, wherein the growingthe crystalline starting layer comprises: growing a dielectric materialhaving an amorphous or a poly-crystalline; and performing an anneal tocrystallize the dielectric material into the crystalline starting layer.18. The method of claim 15, wherein the growing the crystalline startinglayer comprises growing a dielectric III-V compound material.
 19. Themethod of claim 15, wherein the epitaxially growing the first III-Vcompound layer and the growing the crystalline starting layer arein-situ performed in a same process chamber.
 20. The method of claim 15further comprising: before the forming the gate dielectric, forming adielectric passivation layer over and contacting the first III-Vcompound layer; and before the forming the gate dielectric, patterningthe dielectric passivation layer to form an opening, wherein a portionof the crystalline starting layer is exposed through the opening,wherein the gate dielectric extends into the opening.